Transverse light emitting electroluminescent devices
US4309670A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 1979 |
| Grant date | Jan 5, 1982 |
| Priority date | — |
| Expiry date | Sep 13, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/426
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Improved lateral carrier and optical confinement is achieved in heterostructure diodes and lasers having a Fabry-Perot cavity transverse to the plane of the p-n junction of the device. Structural features during fabrication improve carrier confinement to the active region in the established optical cavity. Current confinement means is also fabricated above and below the active region to concentrate the current density to the active region in the optical cavity and thereby improve the overall gain of the device. Such confinement also enhances optical confinement along the cavity. Several reflector structures are disclosed for employment at the cavity ends to provide optical feedback.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.