Method of making a silicon nitride part
US4310477A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 1977 |
| Grant date | Jan 12, 1982 |
| Priority date | — |
| Expiry date | Mar 25, 1997 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B35/593
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of making a silicon nitride part is disclosed. In this method an article of silicon nitride is first made which has a density less than the theoretical density of silicon nitride. This article also contains a densification aid. The entire surface area of this article is coated with a thin silicon nitride skin which is gas impervious. The so coated article is heated to a temperature for a time sufficient so that some of the densification aid may diffuse into the silicon nitride skin. The so treated article is then subjected to a pressure sufficiently high, for a time sufficiently long and at a temperature which permits the silicon nitride article and skin thereon to be compacted to increase the density of the article to a density greater than it originally had and to form the silicon nitride skin about the article so that the skin becomes an integral of the finished part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.