Ion beam lithography process and apparatus using step-and-repeat exposure
US4310743A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 24, 1979 |
| Grant date | Jan 12, 1982 |
| Priority date | — |
| Expiry date | Sep 24, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31788
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A high-resolution high-throughput ion beam lithography process and apparatus for exposing a large area target by a step-and-repeat process which accommodates lateral wafer distortions in the target and optimizes the resolution, throughput, yield, and cost of the process. First there is provided: a target having predetermined segments defined thereon, with the area of each segment being chosen to optimize the resolution, throughput, yield, and cost of the process; a mask placed in proximity to said target, to define the patterned ion beam; a collimated ion beam with a diameter approximately equal to the diameter of the mask, which is projected through the mask to form the patterned ion beam; and a means for aligning the mask and a selected segment of the target. The size of the mask is equal to or larger than the size of one of the predetermined segments of the target and the pattern area of the mask is smaller than the area of one of the selected segments of the target. Next, the mask is aligned with a first selected segment of the target and this first segment is exposed to the patterned ion beam, formed by projecting the collimated ion beam through the mask. Then, the mask is ali…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.