Process for producing a dielectric insulator separated substrate
US4310965A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1980 |
| Grant date | Jan 19, 1982 |
| Priority date | — |
| Expiry date | Apr 10, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/085
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved dielectric insulator separated substrate for semiconductor integrated circuits is obtained by forming a lamination of at least three thin-polycrystalline layers and dielectric films interposed therebetween on a thick polycrystalline layer of the substrate. A thickness x(.mu.m) of each of the thin-polycrystalline layers is represented by the formula: EQU x.ltoreq.y/40 where y is an ultimate thickness of the substrate. By employing the lamination, it is possible to avoid curveness deformation of the substrate due to oxygen diffusion into an exposed polycrystalline layer during doping of an impurity into island regions independently supported by said thick polycrystalline layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.