Diamond and cubic boron nitride abrasive compacts using size selective abrasive particle layers
US4311490A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1980 |
| Grant date | Jan 19, 1982 |
| Priority date | — |
| Expiry date | Dec 22, 2000 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB22F2999/00
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Disclosed is an improved process for preparing a composite compact wherein a mass of abrasive crystals, a mass of metal carbide, and a bonding medium are subjected to a high-temperature/high pressure process for providing a composite compact. The sintered carbide mass supports the mass of abrasive crystals and bonding or catalyst metal, and the abrasive crystal grains are directly bonded to adjacent crystal grains in the mass thereof. Such improved process comprises disposing the mass of abrasive crystals in layers wherein the coarsest layer is closest to the carbide mass and is composed of crystals having a largest dimension of between about 75 and 500 microns and the finest layer is disposed farthest away in the carbide mass and is composed of crystals having a largest dimension of less than 10 microns. The abrasive crystals are selected from the group consisting of diamond and cubic boron nitride and preferably are diamond; the metal carbide preferably is tungsten carbide; and the bonding metal preferably is cobalt. The resulting improved composite compact also is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.