Field effect transistor
US4313126A · kind A · utility
22Cited by
3References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 1979 |
| Grant date | Jan 26, 1982 |
| Priority date | — |
| Expiry date | May 21, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/254
Abstract
A field effect transistor is provided wherein a semiconductor body has a source region and a plurality of drain regions with a gate region common to the plurality of drain regions. A common gate electrode is formed over the common gate region to control the flow of carriers to each one of the plurality of drain regions. With such arrangement an efficient multi-drain field effect transistor is provided through the use of a common gate electrode formed on the semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.