Computer controlled system for processing semiconductor wafers
US4313783A · kind A · utility
159Cited by
11References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 1980 |
| Grant date | Feb 2, 1982 |
| Priority date | — |
| Expiry date | May 19, 2000 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Automated reactor system and process for etching or otherwise processing semiconductor wafers in a plasma environment. The wafers are carried into and out of a reaction chamber by a conveyor and processed on an individual basis. Within the chamber, an electrode mounted on a swinging arm carries each wafer from the conveyor to a processing position adjacent to a stationary electrode. Gas is admitted to the chamber, and the electrodes are energized to ionize the gas and form a plasma for processing the wafer between the electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.