Method for forming a fine pattern of an aluminum film
US4314874A · kind A · utility
25Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1980 |
| Grant date | Feb 9, 1982 |
| Priority date | — |
| Expiry date | Sep 24, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin aluminum film 3 is formed on the top surface of a substrate 2, 1. Selected areas of the aluminum film are irradiated by an oxygen ion beam 6 to form implanted regions 7. The surface is then plasma etched, with the oxygen ion implanted regions serving as a mask to thereby prevent the removal of the underlying areas of the aluminum film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.