Method and apparatus for laser irradiating semiconductor material
US4316074A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 20, 1978 |
| Grant date | Feb 16, 1982 |
| Priority date | — |
| Expiry date | Dec 20, 1998 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K26/0823
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A laser system is disclosed for facilitating transient surface heating and/or melting and regrowth of amorphous, polycrystalline or imperfect crystalline semiconductor wafer material. This system also has specific application to gettering of impurities and the annealing-out of defects within a semiconductor wafer. In the system, a number of circular target-wafers are arranged around the periphery of a turntable. The turntable rotates while a simple, slow-moving beam-delivery system moves radially with respect to the turntable delivering a helical scan which may also be in the form of a multiple-track. Use of the turntable with a multiple wafer load allows efficient batch-processing. Blocking masks may be employed when it is desired to irradiate only selected areas of the semiconductor substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.