Sub-100A range line width pattern fabrication
US4316093A · kind A · utility
11Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 1979 |
| Grant date | Feb 16, 1982 |
| Priority date | — |
| Expiry date | Oct 4, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02208
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Sub-100A line width patterns are formed on a member by electron beam conversion and fixing of a resist that arrives at the reaction zone point by surface migration into a resist pattern of a precise thickness and width while the member rests on an electron backscattering control support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.