Protective transfer assembly for semiconductor devices
US4316231A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 13, 1980 |
| Grant date | Feb 16, 1982 |
| Priority date | — |
| Expiry date | Jun 13, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05F3/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A transfer assembly interposable between a storage tube containing semiconductor devices and a processing station therefor, the assembly effecting a controlled electrostatic discharge of each device taken from the tube to prevent a destructive discharge thereof. The transfer assembly includes an insulating track adapted to receive semiconductor devices from the storage tube, each lead of the device received on the track being engaged by a pair of Kelvin contacts, one of which is connected by a normally-open high impedance relay to an input of a test system for the device, the other being connected to ground through the high-impedance drain and source channel of a field effect transistor. Applied to the gate of the transistor is a ramp voltage causing the channel impedance to diminish at a slew rate producing a gradual and safe bleed of the electrostatic charge carried on the engaged lead. At the conclusion of the discharge cycle, the relay is actuated to connect the lead to the test system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.