Device for chemical dry etching of integrated circuits
US4316791A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 20, 1980 |
| Grant date | Feb 23, 1982 |
| Priority date | — |
| Expiry date | Aug 20, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Apparatus for dry chemical etching caused by ion bombardment of a substrate placed in a vacuum chamber. The substrate is in contact with an electrode, connected to a high frequency bias voltage source having one terminal connected to a ground of the chamber. The etchants are produced in the form of plasma by an electrical discharge maintained in the chamber containing a gas or a suitable gaseous mixture. The plasma is produced by a microwave generator and the bias voltage by means of a high frequency source. The respective amplitudes and frequencies of the two sources enable the base of a groove on an electronic circuit to be etched without erosion of the groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.