Channeled mesa laser
US4317085A · kind A · utility
49Cited by
6References
41Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 1979 |
| Grant date | Feb 23, 1982 |
| Priority date | — |
| Expiry date | Sep 12, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A heterostructure semiconductor laser is characterized by having a channeled mesa contiguous with the top surface of the laser substrate. The channeled mesa comprises an elongated mesa with an elongated channel formed in the top surface of the mesa structure. The epitaxial growth of semiconductor layers over the channeled mesa produces layers having uniform thickness with smooth facet like texture and without layer surface irregularities. The channeled mesa may also be employed in the fabrication of nonplanar large optical cavity lasers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.