Mercury containment for liquid phase growth of mercury cadmium telluride from tellurium-rich solution
US4317689A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 1980 |
| Grant date | Mar 2, 1982 |
| Priority date | — |
| Expiry date | Jul 18, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/907
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Hg.sub.1-x Cd.sub.x Te is an important semiconductor for use in photovoltaic and photoconductive infrared photon detectors. Hg.sub.1-x Cd.sub.x Te can be grown by liquid phase epitaxy at atmospheric pressure from a Te-rich solution in which case the Hg vapor pressure is below 0.1 atm at 500.degree. C. This low vapor pressure makes possible the use of open-tube, slider growth techniques. The present invention describes a covered graphite slider system which provides an additional source of Hg, minimizes loss of Hg from the source wafer and virtually prevents loss of Hg from the (Hg.sub.1-x Cd.sub.x).sub.1-y Te.sub.y growth solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.