High voltage detection circuit
US4318013A · kind A · utility
5Cited by
9References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 1, 1979 |
| Grant date | Mar 2, 1982 |
| Priority date | — |
| Expiry date | May 1, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K5/2472
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An N-channel MOS high voltage detection circuit generates an output when an input voltage (Vin) exceeds a supply voltage (V.sub.DD) by a desired offset voltage. The crossover detection is delayed by pumping more current into an output producing node via a lower resistance field effect transistor having a gate coupled to the input voltage. The output is finally produced when the effect of this transistor is overcome by a second field effect transistor. Switching characteristics may be sharpened by placing a voltage limiting field effect transistor between Vin and the gate of the low resistance field effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.