Dual junction photoelectric semiconductor device
US4318115A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1979 |
| Grant date | Mar 2, 1982 |
| Priority date | — |
| Expiry date | Jul 24, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A photoelectric semiconductor device is disclosed which exhibits a reduced spectral sensitivity in a desired wavelength zone. An N(P) type impurity region is formed in a P(N) type semiconductor substrate to establish a first PN junction functioning as a first photodiode. A P(N) type impurity region is shallowly formed in the N(P) type impurity region to establish a second PN junction functioning as a second photodiode. When the first PN junction is shunted, the photoelectric semiconductor device shows a spectral sensitivity which is reduced in the longer wavelength zone. Contrarily, when the second PN junction is shunted, the photoelectric semiconductor device shows the spectral sensitivity which is reduced in the shorter wavelength zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.