Method for radiation hardening semiconductor devices and integrated circuits to latch-up effects
US4318750A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1979 |
| Grant date | Mar 9, 1982 |
| Priority date | — |
| Expiry date | Dec 28, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/953
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for eliminating the latch-up effect in integrated circuits having parasitic pnpn structures has been described comprising the step of irradiating the circuit with high energy particulate ions to provide low lifetime regions in the circuit to lower parasitic transistor gain. The invention overcomes the problem of latch-up effect in integrated circuits where parasitic pnpn structures act as thyristors or silicon-controlled rectifiers which provide a low impedance path across the pnpn structure when the thyristor or silicon-controlled rectifier is turned on such as by transient ionizing radiation or by transient circuit voltages which forward bias the external junctions of the pnpn structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.