Method of producing semiconductor displacement transducer
US4319397A · kind A · utility
17Cited by
4References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 7, 1980 |
| Grant date | Mar 16, 1982 |
| Priority date | — |
| Expiry date | Jul 7, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49103
Abstract
A strain gauge is formed on one main surface of a semiconductor single crystal substrate while an insulating oxide film is formed on the other main surface of the substrate. A metal junction layer including several layers inclusive of eutectic alloy layers is formed on the surface of the insulating oxide film and the thus prepared structure is mounted on a metal strain generator. By heating this assembly to temperatures approximating to the eutectic point of the eutectic alloy layer, the semiconductor substrate and the metal strain generator are joined together.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.