Structure of the insulator--semiconductor type
US4320178A · kind A · utility
12Cited by
3References
6Claims
0Family size
Inventors
Key dates
| Filing date | Apr 2, 1980 |
| Grant date | Mar 16, 1982 |
| Priority date | — |
| Expiry date | Apr 2, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structure of the insulator--semiconductor type constituted by a semiconducting crystalline substrate formed from a III-V compound of formula (A.sup.III B.sup.V) coated with an insulating layer, wherein the substrate has a specific crystalline orientation and wherein the insulator is a sulphide in accordance with the formula (A.sup.III B.sup.V)S.sub.4. It also relates to a process for the preparation of such a structure. Applications of the invention occur in the fields of microelectronics and optoelectronics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.