Process for producing a layer containing silicon and photoelectric conversion device utilizing this process

US4321420A · kind A · utility

Assignee

• Thomson-CSF · FR

Inventors

• Daniel Kaplan · Paris, FR
• Nicole Sol · Paris, FR
• Pierre Landouar · Paris, FR

Key dates

• Filing date: Jul 29, 1980
• Grant date: Mar 23, 1982
• Expiry date: Jul 29, 2000

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Process for producing layers of silicon or one of its alloys in pure or doped form and able to absorb optical radiation, the layers being of limited thickness, it comprising a first stage of depositing the layer by chemical decomposition of a gaseous mixture containing silane at a temperature close to the crystallization temperature and a second stage of treating in a hydrogen plasma at a lower temperature.