System for soldering a semiconductor laser to a metal base
US4321617A · kind A · utility
23Cited by
6References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 1979 |
| Grant date | Mar 23, 1982 |
| Priority date | — |
| Expiry date | Jul 19, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0237
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A GaAs diode and a copper base are joined together so as to form a soldered system comprising an indium layer inserted between two tungsten layers which serve as a barrier for preventing indium diffusion. A thin gold or platinum wetting layer is applied to the tungsten layers to aid in adherence of the solder to the tungsten without the impairment of the indium during soldering operations due to alloying. The invention is applicable to optical-fiber telecommunication systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.