Patent · US Expired

Solar cells and methods for manufacture thereof

US4322571A · kind A · utility

109Cited by
3References
64Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 17, 1980
Grant dateMar 30, 1982
Priority date
Expiry dateJul 17, 2000

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/965

Abstract

An improved light transducer such as a solar cell and, especially, a concentrator solar cell, together with processes for forming the same which permit the formation of improved light transducers characterized by their high thermal stability and by optimized impurity atom dispersion zones at the surface of either a p-type or an n-type substrate--such, for example, as a silicon substrate--defining: (i) a thermally stable deep junction with relatively high surface concentrations of dopant dispersed in those areas where metallic electrodes are to be formed, thus providing excellent ohmic contact characteristics in such areas; and (ii), an efficient energy conversion shallow junction with relatively lower surface concentrations of dopant in the inter-electrode photoactive regions of the cell, with such inter-electrode photoactive regions preferably being texturized, thereby optimizing current generation per unit of incident radiation and minimizing reflection losses. More particularly, a deep junction (on the order of 0.5 .mu.m or greater) is first formed throughout the substrate's entire near-surface area which is to be exposed to incident radiation; such deep junction is then entirel…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.