Planar transmission line attenuator and switch
US4322695A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 1979 |
| Grant date | Mar 30, 1982 |
| Priority date | — |
| Expiry date | Dec 26, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P1/227
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
The planar transmission line attenuator and switch is formed on a flat piece of semiconductor material. Transmission line metallic conductors are deposited on a flat surface of the semiconductor material, and at least one of the metallic conductors forms a Schottky barrier contact to this flat semiconductor surface. The gap between the metallic conductors defines a shunt current path through the semiconductor material. The semiconductor material at the surface in contact with the transmission line conductor must be conductive. By applying a bias voltage to the metallic conductor forming the Schottky barrier contact, the conductivity of the shunt path can be controlled by changing the depletion layer width across the Schottky barrier. A plurality of planar transmission line switches can be combined into multi-port networks, examples of which are cross-bar switching devices and .beta. element switching devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.