Method for growing a pipe-shaped single crystal
US4323418A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1979 |
| Grant date | Apr 6, 1982 |
| Priority date | — |
| Expiry date | Nov 9, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/104
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A susceptor made of a conductive material which has a melting point higher than that of a starting material and which does not react with the melt of the starting material is heated to a temperature not lower than the melting point of the starting material by the radio frequency induction heating. The starting material is fed onto the upper surface of the heated susceptor at a predetermined rate so as to melt the starting material, the resultant melt of the starting material is caused to flow from the upper surface of the susceptor via the susceptor to the lower surface thereof, the melt is crystallized in touch with a seed crystal arranged on the lower surface in advance, and the seed crystal is transferred downwards, whereby a single crystal is grown. With this method, a large-sized single crystal of an insulator or a semiconductor can be readily produced, and besides a round rod-shaped single crystal, a prism-shaped or pipe-shaped single crystal can be obtained with its sectional dimensions fluctuating little.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.