Method of preparing di and poly chalcogenides of group IVb, Vb, molybdenum and tungsten transition metals by low temperature precipitation from non-aqueous solution and the product obtained by said method
US4323480A · kind A · utility
25Cited by
47References
24Claims
0Family size
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Key dates
| Filing date | May 19, 1980 |
| Grant date | Apr 6, 1982 |
| Priority date | — |
| Expiry date | May 19, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01M6/166
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Finely divided, high surface area, small crystallite (0.1 micron or less) di- and poly-transition metal chalcogenides are prepared by mixing in the absence of an aqueous solvent a transition metal salt with a source of chalcogen yielding a precipitate. The salt and the chalcogen source can be mixed either neat or in the presence of a nonaqueous solvent. The precipitate which results before removal of the anion salt is a finely divided product.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.