Chanelled substrate double heterostructure lasers
US4323859A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 1980 |
| Grant date | Apr 6, 1982 |
| Priority date | — |
| Expiry date | Feb 4, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2232
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In fabricating a III-V compound, for example, GaAs, having a layered structure a first layer is grown on a planar substrate by a vapor deposition process adapted to produce differential growth while a subsequent layer is grown by a deposition process which restores planarity. In this way, a uniformly thick combination layer is produced with a non-planar junction between its composite layers. Particularly in the fabrication of channelled substrate double heterostructure lasers, a channelled blocking layer is grown by organo-metallic pyrolysis (OMP) and a subsequent confining layer is grown using liquid phase epitaxy (LPE). The OMP process produces a channel with flanking shoulder portions which permit LPE growth of a very thin confining layer immediately above the shoulder portions thereby improving linearity of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.