Method of fabricating MOS field effect transistors
US4324038A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 1980 |
| Grant date | Apr 13, 1982 |
| Priority date | — |
| Expiry date | Nov 24, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a MOSFET device (20) in a semiconductor body (10) includes the step of forming source and drain contact electrodes (12.1, 12.2) prior to growth of the gate oxide (10.3) and after formation of a high conductivity surface region (10.5). The exposed mutually opposing sidewall edges of each of the contact electrodes (12.1, 12.2) are coated with a sidewall silicon dioxide layer (15.1, 15.2), and the then exposed surface of the semiconductor body (10) between these sidewalls is etched to depth beneath the high conductivity surface region (10.5) in order to separate it into the source and drain regions (10.1, 10.2). Formation of the high conductivity region may be omitted by using Schottky barrier or impurity doped material for the contact electrodes (12.1, 12.2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.