Magnetron sputtering of magnetic materials
US4324631A · kind A · utility
35Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 23, 1979 |
| Grant date | Apr 13, 1982 |
| Priority date | — |
| Expiry date | Jul 23, 1999 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The advantages of magnetron sputtering are applied to magnetic target materials by substantially reducing the saturation magnetization of the target material temporarily, and magnetron sputtering the magnetic material while in such a state of reduced magnetization. A technique is disclosed for using the thermal energy inherent in the sputtering process for initially heating the target material to its Curie temperature, thereby rendering the material non-magnetic, and for maintaining the target temperature at or above such temperature during the sputtering process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.