Deposition of metal films and clusters by reactions of compounds with low energy electrons on surfaces
US4324854A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 1980 |
| Grant date | Apr 13, 1982 |
| Priority date | — |
| Expiry date | Mar 3, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/146
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film of material such as metal is deposited on the surface of a substrate by placing a substrate (22) into a chamber (10) containing holder (12) cooled by heat exchanger 18. A beam (56) of U.V. light from the illumination source (42) is projected through monochromator (43), mask (46) and lens (16) onto a selected area (58) of the substrate at an energy level exceeding the photoemission threshold of the surface. A slow electron (60) is ejected from the surface into the capture zone (62). A compound AB such as iron pentacarbonyl from supply (30) is leaked into the chamber (10), enters the capture zone (60) to form a highly reactive deposition fragment A.sup.- which attaches to the surface and a dissociation fragment which is evacuated through outlet (14). The deposited fragment may further dissociate to form metal deposit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.