Semiconductor lasers with integrally formed light emitting diodes
US4325034A · kind A · utility
5Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1980 |
| Grant date | Apr 13, 1982 |
| Priority date | — |
| Expiry date | Feb 13, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4031
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Semiconductor lasers exhibit transient relaxation oscillation on start-up and specific lasers often exhibit sustained spontaneous pulsations caused probably by crystalline defects. These fluctuations are suppressed in a laser having an integrally formed light emitting diode (LED) which generates spontaneous light which is coupled into the laser by virtue of the close proximity of the laser and the light emitting diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.