Semiconductor device and method of manufacturing same, as well as a pick-up device and a display device having such a semiconductor device
US4325084A · kind A · utility
29Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 21, 1980 |
| Grant date | Apr 13, 1982 |
| Priority date | — |
| Expiry date | Jul 21, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31784
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to a semiconductor cathode based on avalanche breakdown in the p-n junction. The released electrons obtain extra accelerating energy by means of an electrode provided on the device. The achieved efficiency increase makes the manufacture of such cathodes in planar silicon technology sensible. Such cathodes are applied, for example, in cathode ray tube, flat displays, pick-up tubes and electron lithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.