Producing a silicon carbide structure and multidirectional silicon carbide texture
US4325930A · kind A · utility
6Cited by
7References
5Claims
0Family size
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Inventor
Key dates
| Filing date | Dec 30, 1980 |
| Grant date | Apr 20, 1982 |
| Priority date | — |
| Expiry date | Dec 30, 2000 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2004/10
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The method for producing a silicon carbide structure comprises the stages of immersing the carbon structure into a bath containing 20 to 40% by weight of silicon powder in suspension in a liquid medium containing 10 to 30% by weight of fugitive resin, the remainder being constituted by a resin solvent, and of drying the structure in order to obtain an easy-to-handle carbon structure coated with resin and silicon powder bonded in the resin. The structure is then subjected to a heat treatment to let the silicon react with the carbon and produce a silicon carbide structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.