Semiconductor laser device
US4326176A · kind A · utility
24Cited by
2References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 1977 |
| Grant date | Apr 20, 1982 |
| Priority date | — |
| Expiry date | Apr 12, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3211
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device of this invention has a built-in passive guiding mechanism along the junction plane by growing planar double hetero (DH) layers on a grooved or projected substrate. It operates stably in the lowest transverse mode and provides light-output versus current characteristics fee of either kinks or any anomalies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.