Light-responsive field effect mode semiconductor devices
US4326210A · kind A · utility
8Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 1980 |
| Grant date | Apr 20, 1982 |
| Priority date | — |
| Expiry date | May 12, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/285
Abstract
A field effect semiconductor device comprises a P-N junction with a depletion layer responsive to radiant energy for controllably enabling the field effect semiconductor device. The depletion layer occurs near at least a pair of gate locations within a silicon substrate. The gate locations are of P-type while the silicon substrate is of N-type. The depletion layer is rendered ineffective by photoelectromotive force derived from the radiant energy. A channel emerges according to the shrinkage of the depletion layer to thereby provide electrical connection between a source and drain electrodes of the field effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.