Reactive ion etching of III-V compounds including InP, GaAs-InP and GaAlAs
US4326911A · kind A · utility
18Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 1980 |
| Grant date | Apr 27, 1982 |
| Priority date | — |
| Expiry date | Dec 4, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The successful application of the reactive ion etching technique to the III-V compounds requires the use of the appropriate etch gas. We have found that a gas mixture comprised of either CCl.sub.2 F.sub.2 alone or in combination with one or more of the gasses: argon (Ar), oxygen (O.sub.2) and nitrogen (N.sub.2) will cleanly and effectively etch GaAs and InP and their ternary and quaternary alloys as well as AlGaAs and the oxides of GaAs. The effective ranges of relative flow rates of Ar, CCl.sub.2 F.sub.2 and oxygen are: Ar (0-83%), CCl.sub.2 F.sub.2 (8-100%), O.sub.2 (0-50%), and N.sub.2 (0-60%).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.