Reference voltage source
US4327320A · kind A · utility
27Cited by
7References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1979 |
| Grant date | Apr 27, 1982 |
| Priority date | — |
| Expiry date | Dec 19, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A reference voltage source implemented in silicon-gate CMOS transistor technology comprises a pair of reference transistors of the same conductivity type, the gates of which are made of polycrystalline silicon and differ from each other by the type of doping. The reference voltage can be temperature-compensated by adding an auxiliary compensation voltage source or by establishing a predetermined ratio of current densities in the pair of reference transistors operating in weak inversion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.