Temperature compensation system for Hall effect element
US4327416A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 16, 1980 |
| Grant date | Apr 27, 1982 |
| Priority date | — |
| Expiry date | Apr 16, 2000 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/07
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In a solid state current, power or energy meter having a Hall element magnetically coupled to line current, a system for compensating the Hall voltage for its dependence on temperature comprises a read only memory (ROM) containing experimentally obtained temperature compensation data. The temperature of the Hall element is measured by a thermistor to develop a temperature dependent voltage. In one embodiment, the Hall element voltage and temperature dependent voltage are digitalized and supplied to address the ROM to generate a temperature compensated Hall voltage. In a second embodiment, the ROM is addressed by only the temperature dependent voltage to generate a correction voltage that is added to the Hall element voltage for temperature compensation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.