Organometallic semiconductor devices
US4329418A · kind A · utility
9Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 1980 |
| Grant date | May 11, 1982 |
| Priority date | — |
| Expiry date | Nov 14, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Organotin semiconductor thin films are deposited on a substrate by plasma deposition of reactive organotin species. Conductivity can be increased by heat-treating organotin semiconductors in a reducing atmosphere at a temperature below the melting point of tin. Organotin semiconductors are rendered conductive by exposure to electron or particle beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.