Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors
US4329419A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1980 |
| Grant date | May 11, 1982 |
| Priority date | — |
| Expiry date | Sep 3, 2000 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/037
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A polymeric heat resistant photopolymerizable composition of a polyamide ester resin containing photopolymerizable groups useful for forming relief structures on electrical devices such as capacitors, integrated circuits and semiconductors; a solution of the composition is applied to a substrate such as a coated silicon wafer which forms an electrical device, dried to form a film, the film is exposed to radiation through a pattern and photopolymerized; the unexposed and unpolymerized part of the film is dissolved off and the resulting relief structure is baked to form a polyimide structure with sharp definition and has good mechanical, chemical and electrical properties; to reduce radiation exposure time and increase the rate of photopolymerization the following constituents are used in the composition: PA1 a radiation sensitive polymerizable polyfunctional acrylate compound and a photopolymerization initiator of an aromatic biimidazole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.