Semiconductor light emitting device
US4329660A · kind A · utility
14Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 1980 |
| Grant date | May 11, 1982 |
| Priority date | — |
| Expiry date | Feb 11, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor light emitting device, a buried layer of a semiconductor is selectively formed in at least one of a first and a second clad layers in order to determine a light emitting region by the configuration of the buried layer of the semiconductor. The buried layer of the semiconductor has a conductivity type which is opposite to the conductivity type of the surrounding clad layer and an index of refraction which is different from the index of refraction of the surrounding clad layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.