Lateral PNP transistor
US4329703A · kind A · utility
5Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 1980 |
| Grant date | May 11, 1982 |
| Priority date | — |
| Expiry date | Apr 18, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/615
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Shallow, boron implanted regions are formed by ion implanting. Disclosed is a PNP transistor device (lateral type) having a P type emitter region preferably made with a boron implant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.