VMOS/Bipolar power switching device
US4329705A · kind A · utility
29Cited by
14References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 21, 1979 |
| Grant date | May 11, 1982 |
| Priority date | — |
| Expiry date | May 21, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/406
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A relatively high power switching device is provided via the combination on a common substrate of a VMOS transistor having a gate electrode for receiving a control signal, a drain electrode, and a source electrode, individually connected to the collector and base electrodes of a bipolar transistor, respectively, the collector-emitter current path of the latter being the main current carrying path of the switching device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.