Complementary semiconductor memory device
US4330849A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 1980 |
| Grant date | May 18, 1982 |
| Priority date | — |
| Expiry date | Aug 27, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a semiconductor memory device comprising a semiconductor substrate having a first conductivity type, first and second regions of a second conductivity type opposite to said first type formed in the surface of the semiconductor substrate and separated with a certain space therebetween, a third region of the first conductivity type formed in the second region, and a gate electrode formed on an insulating film on the semiconductor substrate between the first and the third regions. By applying a gate voltage to the gate electrode, charge carriers are transferred between the first and second regions in accordance with the data to be stored. The stored data is read out by applying a prescribed gate voltage to the gate electrode and by detecting the value of the current between the third region and the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.