Electrically alterable read only memory semiconductor device made by low pressure chemical vapor deposition process

US4330930A · kind A · utility

Assignee

• General Instrument Corporation · US

Inventors

• Richard M. Morley · Yonkers, US
• Jagir S. Multani · Dix Hills, US
• J. S. Sandhu · Dix Hills, US

Key dates

• Filing date: Feb 12, 1980
• Grant date: May 25, 1982
• Expiry date: Feb 12, 2000

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/69

Abstract

An electrically alterable read only memory (EAROM) having a tunneling layer of an insulating material such as silicon dioxide which is grown on the substrate by thermal oxidation carried out at low pressure and a layer of silicon nitride laid down on the tunneling layer by a low-pressure chemical vapor deposition, the interface of the two layers forming a charge storage area with the EAROM having improved read/write switching capability and quality, and improved reliability and memory retentivity characteristics.