Process for treating semiconductor devices under atomic hydrogen plasma
US4331486A · kind A · utility
25Cited by
9References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 2, 1980 |
| Grant date | May 25, 1982 |
| Priority date | — |
| Expiry date | Jul 2, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a process and to an apparatus for treating semiconductor devices. A hydrogen plasma is created in the vicinity of the semiconductor devices and the positively polarized plasma particles are removed therefrom. A tightly sealed enclosure is provided and contains two plane, parallel electrodes polarized so as to form an anode and a cathode. Heating means are located in the vicinity of the anode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.