Method for manufacture of ultra-thin film capacitor
US4333808A · kind A · utility
149Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1981 |
| Grant date | Jun 8, 1982 |
| Priority date | — |
| Expiry date | Feb 13, 2001 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/48
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A suitable substrate is provided to which is applied a metal electrically conductive film electrode. The substrate and electrically conductive electrode film are then exposed to ion beam implantation of O+ or N+ ions to impregnate the surface of the metal electrode with O+ or N+ ions. Thereafter, the substrate and electrically conductive film having implanted O+ or N+ ions is annealed so as to stabilize the oxide structure which has been implanted into the surface of the electrically conductive film to provide an ultra-thin dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.