Semiconductor device and a method of contacting a partial region of a semiconductor surface
US4335362A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 1979 |
| Grant date | Jun 15, 1982 |
| Priority date | — |
| Expiry date | Nov 14, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprising, a plurality of semiconductor layers having an outer semiconductor layer, and a contact layer uniformly and entirely covering said outer semiconductive layer and having over its entire surface the same material composition and abutting over its entire surface directly against said outer semiconductive layer but having only on a partial region of its surface a conductive transition to said outer semiconductive layer. The conductive transition being obtained by alloying said partial region by means of a focused laser beam pulse heating only said partial region of the contact layer to the alloying temperature, whereby alloy constituents of the melted contact material wetting said outer semiconductive layer diffuse only in a superficial zone of said outer semiconductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.