Method of and apparatus for control of reactive sputtering deposition
US4336119A · kind A · utility
47Cited by
21References
16Claims
0Family size
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Key dates
| Filing date | Jan 29, 1981 |
| Grant date | Jun 22, 1982 |
| Priority date | — |
| Expiry date | Jan 29, 2001 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/155
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method and apparatus for the control of reactive sputtering deposition of oxide-containing films, including the monitoring of and maintaining the constancy of the deposition rate and total pressure of the system by adjustment of the oxygen and argon input flow rates. Deposition rate is monitored by an activated quartz crystal, and behaves as a sensitive function of actual oxygen partial pressure. Stoichiometry, optical and electrical properties of the oxide-containing films are therefore controllable by maintaining constant oxygen partial pressure.
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