Process for producing silicon carbide heating elements
US4336216A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 1980 |
| Grant date | Jun 22, 1982 |
| Priority date | — |
| Expiry date | Jun 9, 2000 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B35/565
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A process for producing silicon carbide heating elements is described comprising: PA0 a primary sintering wherein a mixture including SiC powder, boron or a boron compound, and carbon or a carbon compound in specific proportions, is molded and sintered to obtain a sintered product having from 70 to 95% of the theoretical density; and PA0 a secondary sintering wherein the sintered product obtained in the primary sintering is further sintered at each temperature from 1,600.degree. C. to 2,200.degree. C. to obtain a sintered product having a density of at least 80% of the theoretical density and a specific resistivity of not more than 1.0 .OMEGA.-cm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.