Monolithic static memory cell
US4336604A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 16, 1980 |
| Grant date | Jun 22, 1982 |
| Priority date | — |
| Expiry date | Jul 16, 2000 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/35
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A monolithic static memory cell has a region of a first conductivity type extending from the upper surface of a semiconductor layer of a second conductivity type carried on a semiconductor body of the first conductivity type and connected to a first drive line. A first zone of the semiconductor layer adjacent the region is covered by a gate connected to a second drive line and separated from the semiconductor layer by a gate insulator. A second zone adjacent the first zone is covered by a conductive coating connected to a supply terminal, the conductive coating being separated from the surface of the semiconductor layer by a thin electrically insulating layer which admits a tunnel current between the surface of the semiconductor layer and the conductive coating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.